Adsorption of tertiarybutylarsine on GaAs(001)-c(4×4) surface studied by molecular beam scattering
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119033
Reference11 articles.
1. Atomic layer epitaxy of III–V compounds using metalorganic and hydride sources
2. Surface chemistry on semiconductors studied by molecular-beam reactive scattering
3. Pulsed trimethylgallium scattering from As-stabilized and Ga-stabilized surfaces
4. Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs
5. Use of tertiarybutylarsine for GaAs growth
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3. Dynamic behavior of group III and V organometallic sources and nanostructure fabrication by supersonic molecular beams;Journal of Crystal Growth;2000-02
4. New apparatus with double supersonic molecular beams for epitaxial growth and surface reaction studies;Review of Scientific Instruments;1999-10
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