Composition and strain in SiGe/Si(001) “nanorings” revealed by combined x-ray and selective wet chemical etching methods
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3152269
Reference17 articles.
1. Structural properties of self-organized semiconductor nanostructures
2. Strain relaxation by alloying effects in Ge islands grown on Si(001)
3. Kinetic origin of island intermixing during the growth of Ge on Si(001)
4. 3D Composition of Epitaxial Nanocrystals by Anomalous X-Ray Diffraction: Observation of a Si-Rich Core in Ge Domes on Si(100)
5. Intermixing and shape changes during the formation of InAs self-assembled quantum dots
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