GaAs/AlGaAs distributed feedback transverse junction stripe laser grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.97747
Reference10 articles.
1. High temperature single‐mode cw operation with a junction‐up TJS laser
2. GaAs/AlGaAs distributed feedback‐transverse junction stripe laser using a hybrid liquid phase epitaxy/metal‐organic chemical vapor deposition growth technique
3. Si-doped GaAs/AlGaAs TJS laser by MBE
4. Summary Abstract: Influence of growth temperature on GaAs/AlGaAs single quantum well structure grown by MBE
5. Low threshold current AlGaAs/GaAs distributed feedback laser grown by two‐step molecular beam epitaxy
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1. Semiconductor lasers for planar integrated optoelectronics;Solid-State Electronics;2000-01
2. LATERAL INJECTION LASERS;International Journal of High Speed Electronics and Systems;1998-12
3. Demonstration of InGaAs/AlGaAs strained‐layer distributed‐feedback grating‐surface‐emitting lasers with a buried second‐order grating structure;Applied Physics Letters;1991-01-21
4. cw surface‐emitting grating‐coupled GaAs/AlGaAs distributed feedback laser with very narrow beam divergence;Applied Physics Letters;1987-06-22
5. Continuous wave operation of a surface‐emitting AlGaAs/GaAs multiquantum well distributed Bragg reflector laser;Applied Physics Letters;1987-06-15
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