Phase change behaviors of Sn-doped Ge–Sb–Te material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2475390
Reference11 articles.
1. Nonvolatile phase change memory nanocell fabrication by femtosecond laser writing assisted with near-field optical microscopy
2. Nonvolatile Memory Based on Phase Change in Se–Sb–Te Glass
3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
4. Modelling glass transition temperatures of chalcogenide glasses. Applied to phase-change optical recording materials
5. Discussion on the Mechanism of Reversible Phase Change Optical Recording
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