Characterization of the effect of growth conditions ona‐SiC:H films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363283
Reference24 articles.
1. Physics of Amorphous Silicon–Carbon Alloys
2. Selective low-power plasma decomposition of silane-methane mixtures for the preparation of methylated amorphous silicon
3. Bonding structure and defects in wide band gap a-Si1−xCx:H films deposited in Hz diluted SiH4+ CH4gas mixtures
4. Compositional and structural properties of hydrogenated amorphous silicon-carbon films prepared by ultra-high-vacuum plasma-enhanced chemical vapour deposition with different carbon sources
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2. Effect of RF power and gas flow ratio on the growth and morphology of the PECVD SiC thin film s for MEMS applications;Bulletin of Materials Science;2015-06-17
3. PECVD/ECR/HWCVD Multichamber System with Robotic Substrate Handling System for deposition of Thin Film Electronic Devices;Journal of Physics: Conference Series;2012-11-05
4. Structural and optical properties of nc-3C–SiC films synthesized by hot wire chemical vapor deposition from SiH4–C2H2–H2 mixture;Thin Solid Films;2012-11
5. Effect of filament temperature on properties of hot wire CVD deposited nc-3C-SiC films from SiH4–C2H2–H2 mixture;Materials Research Innovations;2012-06
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