Ge doping of β-Ga2O3 by MOCVD
Author:
Affiliation:
1. Agnitron Technology Incorporated, Chanhassen, Minnesota 55317, USA
Funder
Office of Naval Research
AFWERX
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0059657
Reference57 articles.
1. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
2. Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures
3. Growth of β-Ga2O3Single Crystals by the Edge-Defined, Film Fed Growth Method
4. Large-size β-Ga2O3 single crystals and wafers
5. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth
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