Determination of surface lattice strain in ZnTe epilayers on {100}GaAs by ion channeling and reflectance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110117
Reference18 articles.
1. Effects of Zn to Te ratio on the molecular‐beam epitaxial growth of ZnTe on GaAs
2. The MOVPE growth and doping of ZnTe
3. Defects in epitaxial multilayers
4. Intrinsic and extrinsic photoluminescence spectra of ZnTe films on GaAs deposited by molecular‐beam and organo‐metallic vapor‐phase epitaxy
5. Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe
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2. Effect of thermal annealing on the surface, optical, and structural properties of p-type ZnSe thin films grown on GaAs (100) substrates;Journal of Materials Science;2004-01
3. Structural characterization of epitaxial Cd1−xZnxTe semiconductor thin films by ion beam techniques;Journal of Crystal Growth;2003-06
4. The dependence of the structural and optical properties on the Te mole fraction in ZnS1−xTex/GaAs heterostructures;Journal of Physics and Chemistry of Solids;2003-04
5. Effect of a ZnSe buffer layer on the surface, structural, and optical properties of the ZnTe/ZnSe/GaAs heterostructures;Materials Research Bulletin;2002-08
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