Nonplanar large optical cavity GaAs/GaAlAs semiconductor laser
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90967
Reference10 articles.
1. Etched buried heterostructure GaAs/GaAlAs injection lasers
2. Growth characteristics of GaAs‐Ga1−xAlxAs structures fabricated by liquid‐phase epitaxy over preferentially etched channels
3. Growth of GaAs‐Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two‐dimensional thin‐film definition
4. Optically pumped GaAs‐Ga1−xAlxAs half‐ring laser fabricated by liquid‐phase epitaxy over chemically etched channels
5. Mode properties of GaAs‐Ga1−xAlxAs heterostructure inverted‐ridge optical waveguides
Cited by 37 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Review of the Structures and Properties of Fabry–Perot Cavity Junction Lasers;Physics of Semiconductor Lasers;1991
2. Modal analysis of semiconductor lasers with nonplanar mirrors;IEEE Journal of Quantum Electronics;1986-03
3. Uniformity of an embedded stripe large optical‐cavity GaAs/GaAlAs double‐heterostructure laser grown by metallo‐organic chemical vapor deposition;Journal of Applied Physics;1986-02-15
4. LPE of buried heterostructure laser devices;Progress in Crystal Growth and Characterization;1986-01
5. High-power (AlGa)As strip-buried heterostructure lasers;IEEE Journal of Quantum Electronics;1985-10
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