Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102746
Reference13 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. Ytterbium‐doped InP light‐emitting diode at 1.0 μm
3. Yb‐doped InP grown by metalorganic chemical vapor deposition
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1. Rare-earth beta-diketonates;Handbook on the Physics and Chemistry of Rare Earths;2005
2. Synthesis, Structure, and Molecular Orbital Studies of Yttrium, Erbium, and Lutetium Complexes Bearing η2-Pyrazolato Ligands: Development of a New Class of Precursors for Doping Semiconductors;Inorganic Chemistry;1999-09-18
3. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999
4. Synthesis, Structure, and Reactivity of Potassium Pyrazolato Complexes: The First Structurally Documented η2-Pyrazolato Coordination by a Main Group Metal;Inorganic Chemistry;1998-07-01
5. Organolanthanides in Materials Science;Comments on Inorganic Chemistry;1997-03
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