Dislocation-limited open circuit voltage in film crystal silicon solar cells-Reference-Cited by-同舟云学术

Dislocation-limited open circuit voltage in film crystal silicon solar cells

Published:2012-09-17 Issue:12 Volume:101 Page:123510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Alberi Kirstin,Branz Howard M.,Guthrey Harvey,Romero Manuel J.,Martin Ina T.,Teplin Charles W.,Stradins Paul,Young David L.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4754142

Reference21 articles.

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3. M. J. Keevers, T. L. Young, U. Schubert, and M. A. Green, in Proceedings of the 22nd European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC), Milan (2007), p. 1783.

4. Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

5. Thin-film monocrystalline-silicon solar cells made by a seed layer approach on glass-ceramic substrates

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