Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa-Reference-Cited by-同舟云学术

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Oxygen migration enthalpy likely limits oxide precipitate dissolution during tabula rasa

Published:2017-09-25 Issue:13 Volume:111 Page:132102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Looney E. E.¹^ORCID,Laine H. S.¹²,Youssef A.¹,Jensen M. A.¹,LaSalvia V.³,Stradins P.³,Buonassisi T.¹

Affiliation:

1. Mechanical Engineering Department, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

2. Department of Electronics and Nanoengineering, Aalto University, 02150 Espoo, Finland

3. National Renewable Energy Laboratory, Golden, Colorado 80401, USA

Funder

National Science Foundation (NSF)

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4987144

Reference50 articles.

1. Economically sustainable scaling of photovoltaics to meet climate targets

2. Detecting efficiency-limiting defects in Czochralski-grown silicon wafers in solar cell production using photoluminescence imaging

3. Parameterisation of injection-dependent lifetime measurements in semiconductors in terms of Shockley-Read-Hall statistics: An application to oxide precipitates in silicon

4. On the nature of striations in n-type silicon solar cells

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1. Basic characterization and electrical properties of Si crystals;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

2. Local atomic configurations, energy structure, and optical properties of implantation defects in Gd-doped silica glass: An XPS, PL, and DFT study;Journal of Alloys and Compounds;2019-08

3. 22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers;Solar RRL;2019-08

4. Methods to Improve Bulk Lifetime in n-Type Czochralski-Grown Upgraded Metallurgical-Grade Silicon Wafers;IEEE Journal of Photovoltaics;2018-07

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