Amplified spontaneous emission from a surface-modified GaN film fabricated under pulsed intense UV laser irradiation
Author:
Affiliation:
1. Research Institute for Electronic Science, Hokkaido University, Sapporo 001-0020, Japan
Funder
Amada Foundation
Nippon Sheet Glass Foundation for Materials Science and Engineering
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5040551
Reference23 articles.
1. Zn related electroluminescent properties in MOVPE grown GaN
2. Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
3. Variation of Chemical and Photoluminescence Properties of Mg-Doped GaN Caused by High-Temperature Process
4. The Blue Laser Diode
5. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets
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