Determination of silicon evaporation rate at 1200 °C in hydrogen-Reference-Cited by-同舟云学术

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Determination of silicon evaporation rate at 1200 °C in hydrogen

Published:1995-12-25 Issue:26 Volume:67 Page:3951-3953
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhong Lei,Fujimori Hiroyuki,Shimbo Masaro,Kashima Kazuhiko,Matsushita Yoshiaki,Aiba Yoshiro,Hayashi Kenro,Takeda Ryuji,Shirai Hiroshi,Saito Hiroyuki,Matsushita Jun‐ichi,Yoshikawa Jun

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114415

Reference16 articles.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on surface smoothing of silicon-on-insulator with gas phase hydrogen chloride etching;Materials Science in Semiconductor Processing;2021-08

2. Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon;Journal of Applied Physics;2000-05

3. Atomic Force Microscope Observation of the Change in Shape and Subsequent Disappearance of “Crystal-Originated Particles” after Hydrogen-Atmosphere Thermal Annealing;Japanese Journal of Applied Physics;1998-01-15

4. Advantages and Limitations of Silicon as a Bearing Material for MEMS Applications;Tribology Issues and Opportunities in MEMS;1998

5. Double‐crystal x‐ray diffraction from silicon film on insulator;Applied Physics Letters;1996-08-26

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