Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates-Reference-Cited by-同舟云学术

Mechanisms of edge-dislocation formation in strained films of zinc blende and diamond cubic semiconductors epitaxially grown on (001)-oriented substrates

Published:2011-06-15 Issue:12 Volume:109 Page:123519
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Bolkhovityanov Yu. B.,Deryabin A. S.,Gutakovskii A. K.,Sokolov L. V.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3597903

Reference32 articles.

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3. Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

4. Surfactant-mediated epitaxy of relaxed low-doped Ge films on Si(001) with low defect densities

5. Surfactant-mediated epitaxy of high-quality low-doped relaxed germanium films on silicon (001)

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