Dependence of laser‐induced damage of surface layers of GaP on pulse width and wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94233
Reference11 articles.
1. Laser‐induced recrystallization and damage in GaAs
2. Laser‐induced recrystallization and damage in GaAs
3. Laser‐induced recrystallization and damage in GaAs
4. Laser‐induced recrystallization and damage in GaAs
5. Study of surface crystallinity and stoichiometry of laser‐annealed GaAs using time‐resolved reflectivity and channeling
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1. Modification of photoelectric and electrical properties of III-V semiconductors by pulsed laser irradiation;Semiconductor Physics, Quantum Electronics and Optoelectronics;2000-01-06
2. Laser-induced electronic processes on GaP (110) surfaces: Particle emission and ablation initiated by defects;Physical Review B;1992-04-15
3. Laser-induced damaged formation and tungsten deposition on GaAs;Applied Surface Science;1992-01
4. Laser Induced Modification of n-GaAs below the Classical Melting Threshold;physica status solidi (a);1990-10-16
5. Laser induced generation of a micro–crack structure on (111) GaP;physica status solidi (a);1990-09-16
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