Domain structures induced by tensile thermal strain in epitaxial PbTiO<sub>3</sub> films on silicon substrates-Reference-Cited by-同舟云学术

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Domain structures induced by tensile thermal strain in epitaxial PbTiO₃ films on silicon substrates

Published:2022-01-21 Issue:3 Volume:131 Page:035301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sato Tomoya¹,Kodera Masanori²^ORCID,Ichinose Daichi¹,Mimura Takanori¹^ORCID,Shimizu Takao¹³^ORCID,Yamada Tomoaki⁴^ORCID,Funakubo Hiroshi¹²^ORCID

Affiliation:

1. School of Materials and Chemical Technology, Tokyo Institute of Technology, Yokohama 226-8502, Japan

2. Material Research Center for Element Strategy, Tokyo Institute of Technology, Yokohama 226-8502, Japan

3. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba 305-0044, Japan

4. Department of Energy Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan

Funder

Japan Society for the Promotion of Science

Japan Synchrotron Radiation Research Institute

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0074884

Reference40 articles.

1. Ferroelectric thin films: Review of materials, properties, and applications

2. Ferroelectric thin films for micro-sensors and actuators: a review

3. Strain relaxation by domain formation in epitaxial ferroelectric thin films

4. Domain formation and strain relaxation in epitaxial ferroelectric heterostructures

5. Strain-relaxed structure in (001)∕(100)-oriented epitaxial PbTiO3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition

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1. Crystal structures, ferroelectric properties, and piezoelectric properties of Sn-doped epitaxial BaTiO3 thin films;Journal of the Korean Ceramic Society;2024-04-03

2. Automated Experiments of Local Non‐Linear Behavior in Ferroelectric Materials;Small;2022-10-17

3. Preferential growth of (001)-oriented Bi2SiO5 thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties;Scientific Reports;2022-09-08

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