Improved strain analysis in semiconductor crystals by x‐ray diffractometry enhanced with ultrasound
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110742
Reference13 articles.
1. Recent developments in the strained layer epitaxy of germanium–silicon alloys
2. Growth and properties of Si/SiGe superlattices
3. Evaluation of Acoustoelectric Wave Vectors and Amplitudes from X-Ray Diffraction Experiments
4. Silicon-crystal rocking curves under X-ray acoustic resonance conditions
5. X-ray-diffraction studies of acoustoelectrically amplified phonons
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1. Changes in Nanostructure of Wood Cell Wall during Deformation;Materials Science Forum;2008-09
2. Bulk strains in Si induced by thickness mode ultrasonic waves and analysed with x-ray Bragg diffraction;Journal of Physics D: Applied Physics;2008-02-22
3. Ultrasound adjustable Laue-Laue double-crystal x-ray monochromator;Journal of Physics D: Applied Physics;1999-08-12
4. Acoustically adjustable LiNbO3 double-crystal monochromator for synchrotron radiation;Review of Scientific Instruments;1999-05
5. X-ray Bragg Diffraction in a Strong Acoustic Field;Journal of Applied Crystallography;1998-02-01
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