FIELD‐ENHANCED EMISSION AND CONSTANT‐FIELD DOMAINS IN SEMICONDUCTORS WITH DEEP TRAPS
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1652915
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1. Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs and the influence of the compensation mechanism on the particle detector performance;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-09
2. An extended drift-diffusion model of semi-insulating n-GaAs Schottky-barrier diodes;Semiconductor Science and Technology;1997-11-01
3. Chapter 10 Gallium Arsenide Radiation Detectors and Spectrometers;Semiconductors for Room Temperature Nuclear Detector Applications;1995
4. Evidence for field enhanced electron capture by EL2 centers in semi‐insulating GaAs and the effect on GaAs radiation detectors;Journal of Applied Physics;1994-06-15
5. Present status of undoped semi-insulating LEC bulk GaAs as a radiation spectrometer;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1994-04
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