A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2966157
Reference7 articles.
1. A. L. McWhorter, Semiconductor Surface Physics (University of Pennsylvania, Philadelphia, 1957), p. 207.
2. Conductance modulation of submicrometer metal–oxide–semiconductor field-effect transistors by single-electron trapping
3. On the origin of 1/f noise in polysilicon emitter bipolar transistors
4. Correlation of telegraph noise between parallel and antiparallel states of magnetic tunnel junctions
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1. RTS modeling, simulation and parameter extraction;Random Telegraph Signals in Semiconductor Devices;2017
2. Observation and coherent control of interface-induced electronic resonances in a field-effect transistor;Nature Materials;2016-09-19
3. Continuous weak measurement of a trapped electron using a percolation field effect transistor;Applied Physics Letters;2013-08-26
4. Current fluctuations in polystyrene nano-compounds;The European Physical Journal B;2009-12-04
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