Control of stacking direction and optical anisotropy in InAs/GaAs quantum dots by In flux
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4815936
Reference24 articles.
1. Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s
2. Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band
3. Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
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1. Bound-to-continuum intraband transition properties in InAs/GaAs quantum dot superlattice solar cells;Applied Physics Express;2019-12-01
2. Probing indirect exciton complexes in a quantum dot molecule via capacitance-voltage spectroscopy;Physical Review B;2016-12-27
3. 3D compositional analysis at atomic scale of InAlGaAs capped InAs/GaAs QDs;Scripta Materialia;2015-07
4. Understanding the electric field control of the electronic and optical properties of strongly-coupled multi-layered quantum dot molecules;Nanoscale;2015
5. Electronic and optical properties of [110]-tilted InAs/GaAs quantum dot stacks;Physical Review B;2014-02-10
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