Diode assisted giant positive magnetoresistance in n-type GaAs at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813509
Reference22 articles.
1. Tunnel Barrier Enhanced Voltage Signal Generated by Magnetization Precession of a Single Ferromagnetic Layer
2. Real-time evolution of tunneling magnetoresistance during annealing in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
3. Giant spin-accumulation signal and pure spin-current-induced reversible magnetization switching
4. Electrical creation of spin polarization in silicon at room temperature
5. Room-Temperature Spin Injection from Fe into GaAs
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