Effect of inhomogeneous mesoporosity and defects on the luminescent properties of slanted silicon nanowires prepared by facile metal-assisted chemical etching-Reference-Cited by-同舟云学术

Effect of inhomogeneous mesoporosity and defects on the luminescent properties of slanted silicon nanowires prepared by facile metal-assisted chemical etching

Published:2018-09-14 Issue:10 Volume:124 Page:104303
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Adhila T. K.¹²,Hemam Rachna D.³,Nanda K. K.³,Barshilia Harish C.¹^ORCID

Affiliation:

1. Nanomaterials Research Laboratory, Surface Engineering Division, CSIR-National Aerospace Laboratories, Post Bag No. 1779, Bangalore 560017, India

2. Academy of Scientific and Innovative Research, CSIR-NAL Campus, Bangalore 560017, India

3. Materials Research Center, Indian Institute of Science, Bangalore 560012, India

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5044584

Reference63 articles.

1. SEMICONDUCTOR NANOWIRES AND NANOTUBES

2. Nanowire electronic and optoelectronic devices

3. One dimensional transport in silicon nanowire junction-less field effect transistors

4. Large-area silicon nanowire Schottky junction photodetector with tunable absorption and low junction capacitance

5. Coaxial silicon nanowires as solar cells and nanoelectronic power sources

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