Broadband nonlinear optical response of monolayer MoSe2 under ultrafast excitation-Reference-Cited by-同舟云学术

Broadband nonlinear optical response of monolayer MoSe2 under ultrafast excitation

Published:2018-01-15 Issue:3 Volume:112 Page:031108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nie Zhonghui¹,Trovatello Chiara²,Pogna Eva A. A.²,Dal Conte Stefano²³,Miranda Paulo B.⁴^ORCID,Kelleher Edmund⁵,Zhu Chunhui¹,Turcu Ion Crisitan Edmond¹,Xu Yongbing¹,Liu Kaihui⁶,Cerullo Giulio²³,Wang Fengqiu¹

Affiliation:

1. School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2. Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy

3. Istituto di Fotonica e Nanotecnologie (IFN), CNR, Piazza Leonardo da Vinci 32, I-20133 Milano, Italy

4. Instituto de Física de São Carlos, Universidade de São Paulo, P.O. Box 369, 13560-970 São Carlos-SP, Brazil

5. Femtosecond Optics Group, Department of Physics, Imperial College London, SW7 2AZ, London, United Kingdom

6. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China

Funder

European Union Horizon 2020

Jiangsu Shuangchuang Team

National Young 1000 Talent Plan

the National Basic Research Program of China

the National Key R&D Program of China

National Natural Science Foundation of China

Department of Education and Training | Australian Research Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5010060

Reference36 articles.

1. Atomically ThinMoS2: A New Direct-Gap Semiconductor

2. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

3. Population inversion and giant bandgap renormalization in atomically thin WS2 layers

4. Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

5. Coupled Spin and Valley Physics in Monolayers ofMoS2and Other Group-VI Dichalcogenides

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