Fabrication of Si single-electron transistors having double SiO2 barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1485306
Reference17 articles.
1. Room-temperature single-electron memory
2. Verify: key to the stable single-electron-memory operation
3. Room temperature operation of Si single-electron memory with self-aligned floating dot gate
4. Effects of coupling and nonresonant tunneling on Coulomb blockade oscillations in an asymmetric double dot structure
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