Precipitation of impurities in GaAs amorphized by ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99942
Reference15 articles.
1. The Role of Damage in the Annealing Characteristics of Ion Implanted Si
2. Planar and residual channeling of Si+ implants in GaAs
3. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
4. Argon implantation in GaAs: Damage and lattice site location analyses
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1. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs;Journal of Applied Physics;2015-02-10
2. Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
3. Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As;Applied Physics Letters;2013-12-02
4. (Invited) A Brief Review of Doping Issues in III-V Semiconductors;ECS Transactions;2013-05-03
5. Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation;Physica B: Condensed Matter;2001-12
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