635 nm GaInP/GaAlInP surface‐emitting laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110168
Reference11 articles.
1. Short-wavelength InGaAlP visible laser diodes
2. 3 W CW laser diodes operating at 633 nm
3. Low threshold current density (760 A/cm2) and high power (45 mW) operation of strained Ga0.42In0.58P multiquantum well laser diodes emitting at 632 nm
4. High‐power 630–640 nm GaInP/GaAlInP laser diodes
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Plasma-enhanced chemical vapor deposition of SiOx/SiNx Bragg reflectors;Thin Solid Films;2002-09
2. Single-mode and single-beam surface emission from visible red GaInP/AlGaInP laser diodes;Applied Physics Letters;1997-05-05
3. Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers;Applied Physics Letters;1996-06-10
4. Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures;Electronics Letters;1994-05-12
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