Aluminum-oxide-based inversion layer solar cells on n-type crystalline silicon: Fundamental properties and efficiency potential
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865962
Reference39 articles.
1. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
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3. Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells
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5. Effective surface passivation of crystalline silicon by rf sputtered aluminum oxide
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