Large fluorocarbon ions can contribute to film growth during plasma etching of silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1483372
Reference42 articles.
1. Surface-science aspects of plasma-assisted etching
2. Role of ions in reactive ion etching
3. Surface processes in low pressure plasmas
4. Fluorinated amorphous carbon films for low permittivity interlevel dielectrics
5. Fluorocarbon radicals and surface reactions in fluorocarbon high density etching plasma. II. H2 addition to electron cyclotron resonance plasma employing CHF3
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1. Transient behavior in quasi-atomic layer etching of silicon dioxide and silicon nitride in fluorocarbon plasmas;Journal of Vacuum Science & Technology A;2018-11
2. Chemical Reaction Dynamics of SiO2Etching by CF2Radicals: Tight-Binding Quantum Chemical Molecular Dynamics Simulations;Japanese Journal of Applied Physics;2013-02-01
3. IR spectroscopy of gaseous fluorocarbon ions: The perfluoroethyl anion;Chemical Physics;2012-04
4. Surface morphology and structural analysis of fluorocarbon nano-rings formation through EBL and SiO2 plasma etching;Vacuum;2012-03
5. Comparison of fluorocarbon film deposition by pulsed/continuous wave and downstream radio frequency plasmas;Vacuum;2010-08
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