The effect of strain on tunnel barrier height in silicon quantum devices
Author:
Affiliation:
1. Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA
2. National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0010253
Reference40 articles.
1. Single-electron transistor as a charge sensor for semiconductor applications
2. Electrical metrology with single electrons
3. A two-qubit logic gate in silicon
4. Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
5. Quantum computation with quantum dots
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