No temperature dependence of spin relaxation in InGaN phase-separated quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2178411
Reference23 articles.
1. Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells
2. Highly Repetitive Picosecond Polarization Switching in Type-II AlGaAs/AlAs Multiple Quantum Well Structures
3. Spin relaxation and all optical polarization switching at 1.52 micrometres in InGaAs(P)/InGaAsP multiple quantum wells
4. Quantum computation with quantum dots
5. Quantum gates using spin states of triple quantum dot
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1. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures;Semiconductor Science and Technology;2018-10-17
2. Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure;Scientific Reports;2016-10-19
3. Time-resolved and temperature-varied photoluminescence studies of InGaN/GaN multiple quantum well structures;Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting;2012-10-15
4. Valence band mixing of cubic GaN/AlN quantum dots;Journal of Physics: Condensed Matter;2012-02-21
5. Temperature-insensitive optical alignment of the exciton in nanowire-embedded GaN quantum dots;Physical Review B;2011-12-15
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