Highly flexible anisotropic magnetoresistance sensor for wearable electronics

Author:

Chen Yanning12,Zhao Dongyan1,Shao Jin1,Fu Zhen2ORCID,Wang Chenying3,Wang Shuaipeng2,Du Jian1,Zhong Mingchen2,Duan Junbao4,Li Yang4,Hu Zhongqiang4ORCID

Affiliation:

1. National and Local Joint Engineering Research Center for Reliability Technology of Energy Internet Intelligent Terminal Core Chip, Beijing Smart-Chip Microelectronics Technology Co., Ltd. 1 , Beijing 100192, China

2. Beijing Chip Identification Technology Co., Ltd. 2 , Beijing 102200, China

3. International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University 3 , Xi’an 710049, China

4. Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education and International Center for Dielectric Research, School of Electronic Science and Engineering, Xi’an Jiaotong University 4 , Xi’an 710049, China

Abstract

The emerging market of wearable devices for tracking and positioning requires the development of highly flexible magnetic sensors. Due to the stable magnetoresistance ratio and simple fabrication process, sensors based on the anisotropic magnetoresistance (AMR) effect have been proposed as promising candidates. However, the stability of AMR sensors under different bending situations has rarely been investigated. In this work, we proposed a flexible AMR magnetic sensor deposited on an ultra-thin Kapton substrate, which exhibits excellent anti-fatigue behavior at different bending curvatures ranging from 1/3 to 1/10 mm−1. Experimental results show that the sensitivity of our proposed flexible AMR sensor remains as high as 0.25 Oe−1 after being bent 500 times, showing promising potential for application in wearable electronic devices.

Funder

The Laboratory Open Fund of Beijing Smart-chip Microelectronics Technology Co., Ltd.

Publisher

AIP Publishing

Subject

Instrumentation

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