Ultraviolet laser-driven ultra-high transverse voltage in Bi-2201 thin films

Author:

Cheng W. P.1,He Y. D.12,Wei R. H.1ORCID,Hu L.1ORCID,Song W. H.1ORCID,Cai C. B.3ORCID,Zhu X. B.1ORCID,Sun Y. P.145ORCID

Affiliation:

1. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences 1 , Hefei 230031, China

2. University of Science and Technology of China 2 , Hefei 230026, China

3. Physics Department, Shanghai Key Laboratory of High Temperature Superconductors, Shanghai University 3 , Shanghai 200444, China

4. High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 4 , Hefei 230031, China

5. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University 5 , Nanjing 210093, China

Abstract

The development of high-performance optically induced voltage materials represents a significant challenge within the realm of optical detection. The constraints posed by low induced voltage and extended response times have impeded the practical applicability of optical and thermal radiation detectors. In this investigation, we propose the utilization of superconducting Bi2Sr2CuOy (Bi-2201) as a pulsed laser-induced voltage material, revealing the emergence of notable transverse voltage signals in tilted thin films. A noteworthy peak voltage of 25.12 V is attained upon exposure to ultraviolet pulsed laser (248 nm), with a rapid rise time of merely 60 ns. Furthermore, we establish an empirical equation specific to our laser detection heterostructure, serving as a benchmark for Bi-2201-based laser detection systems. These findings introduce a promising avenue for the expanded practical applications of high-temperature superconductors.

Funder

National Natural Science Foundation of China

Anhui Provincial Key Research and Development Plan

the HFIPS Director’s Fund

Publisher

AIP Publishing

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