Scalable memory elements based on rectangular SIsFS junctions-Reference-Cited by-同舟云学术

Scalable memory elements based on rectangular SIsFS junctions

Published:2021-11-07 Issue:17 Volume:130 Page:173901
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Karelina L. N.¹^ORCID,Hovhannisyan R. A.²^ORCID,Golovchanskiy I. A.²³^ORCID,Chichkov V. I.³^ORCID,Ben Hamida A.³,Stolyarov V. S.²⁴^ORCID,Uspenskaya L. S.¹,Erkenov Sh. A.¹²⁴,Bolginov V. V.¹^ORCID,Ryazanov V. V.¹³^ORCID

Affiliation:

1. Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Russia

2. Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia

3. National University of Science and Technology MISiS, 119049 Moscow, Russia

4. Dukhov All-Russia Research Institute of Automatics, 101000 Moscow, Russia

Funder

Russian Foundation for Basic Research

Ministry of Science and Higher Education of the Russian Federation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0063274

Reference27 articles.

1. Energy-Efficient Superconducting Computing—Power Budgets and Requirements

2. Beyond Moore’s technologies: operation principles of a superconductor alternative

3. Design of all-dc-powered high-speed single flux quantum random access memory based on a pipeline structure for memory cell arrays

4. Magnetic switches based on Nb-PdFe-Nb Josephson junctions with a magnetically soft ferromagnetic interlayer

5. Ferromagnetic Josephson switching device with high characteristic voltage

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