On the crystalline structure, stoichiometry and band gap of InN thin films-Reference-Cited by-同舟云学术

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On the crystalline structure, stoichiometry and band gap of InN thin films

Published:2005 Issue:7 Volume:86 Page:071910
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Yu K. M.,Liliental-Weber Z.,Walukiewicz W.,Shan W.,Ager J. W.,Li S. X.,Jones R. E.,Haller E. E.,Lu Hai,Schaff William J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference16 articles.

1. Transport evidence for pressure-induced superconductivity in CePd2Si2

2. Synthesis of III–V semiconductor nitrides by reactive cathodic sputtering

3. Optical band gap of indium nitride

4. Unusual properties of the fundamental band gap of InN

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