Modification of far-field radiation pattern by shaping InGaN/GaN nanorods-Reference-Cited by-同舟云学术

Modification of far-field radiation pattern by shaping InGaN/GaN nanorods

Published:2017-01-30 Issue:5 Volume:110 Page:052103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Jiao Q. Q.¹,Chen Z. Z.¹^ORCID,Feng Y. L.¹,Zhang S.²^ORCID,Li S. F.³,Jiang S. X.¹,Li J. Z.¹,Chen Y. F.¹,Yu T. J.¹^ORCID,Kang X. N.¹,Gu E.²,Shen B.¹,Zhang G. Y.¹³

Affiliation:

1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871 China

2. Institute of Photonics, University of Strathclyde, Glasgow G4 0NW, Scotland, United Kingdom

3. Dongguan Institute of Optoelectronics, Peking University, Dongguan, 523808 Guangdong, China

Funder

National Natural Science Foundation of China (NSFC)

Guangdong Science and Technology Department (Science and Technology Department, Guangdong Province)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4975203

Reference21 articles.

1. Controlling neural circuits with light

2. Optical properties of plasmonic light-emitting diodes based on flip-chip III-nitride core-shell nanowires

3. p-Type Modulation Doped InGaN/GaN Dot-in-a-Wire White-Light-Emitting Diodes Monolithically Grown on Si(111)

4. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale

5. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

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