The demonstration of a D-SMT stressor on Ge planer n-MOSFETs
Author:
Affiliation:
1. Department of Mechanical Engineering, National Taiwan University, Taipei, Taiwan, R. O. C., 10617
Funder
National Science Council
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/4/1.4919624.pdf?itemId=/content/aip/journal/adva/5/4/10.1063/1.4919624&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference13 articles.
1. Modeling of NMOS performance gains from edge dislocation stress
2. Molecular Dynamic simulation study of stress memorization in Si dislocations
3. The demonstration of D-SMT stressor on Si and Ge n-FinFETs
4. Modeling and Optimization of Edge Dislocation Stressors
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The dependency of different stress-level SiN capping films and the optimization of D-SMT process for the device performance booster in Ge n-FinFETs;Applied Physics Letters;2015-08-17
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