Impurity-induced deep centers in Tl6SI4-Reference-Cited by-同舟云学术

Impurity-induced deep centers in Tl6SI4

Published:2017-04-14 Issue:14 Volume:121 Page:145102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shi Hongliang¹²,Lin Wenwen³,Kanatzidis Mercouri G.³,Szeles Csaba⁴,Du Mao-Hua¹^ORCID

Affiliation:

1. Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

2. Key Laboratory of Micro-Nano Measurement-Manipulation and Physics (Ministry of Education), School of Physics and Nuclear Energy Engineering, Beihang University, Beijing 100191, China

3. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA

4. Nious Technologies, Wexford, Pennsylvania 15090, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4980174

Reference15 articles.

1. Cadmium zinc telluride and its use as a nuclear radiation detector material

2. Compound semiconductor radiation detectors

3. Thallium Chalcohalides for X-ray and γ-ray Detection

4. Photoluminescent properties of semiconducting Tl6I4Se

5. Electronic structure and defect properties of Tl6SeI4: Density functional calculations

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