Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm-Reference-Cited by-同舟云学术

Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm

Published:2020-01-13 Issue:2 Volume:116 Page:023102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Podemski Paweł¹^ORCID,Musiał Anna¹^ORCID,Gawarecki Krzysztof²^ORCID,Maryński Aleksander¹^ORCID,Gontar Przemysław¹^ORCID,Bercha Artem³^ORCID,Trzeciakowski Witold A.³^ORCID,Srocka Nicole⁴,Heuser Tobias⁴,Quandt David⁴^ORCID,Strittmatter André⁴^ORCID,Rodt Sven⁴^ORCID,Reitzenstein Stephan⁴^ORCID,Sęk Grzegorz¹^ORCID

Affiliation:

1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, 50-370 Wrocław, Poland

2. Department of Theoretical Physics, Wrocław University of Science and Technology, 50-370 Wrocław, Poland

3. Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland

4. Institute of Solid State Physics, Technische Universität Berlin, 10623 Berlin, Germany

Funder

National Centre for Research and Development in Poland

National Science Centre of Poland

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5124812