Effect of donor-complex-defect-induced dipole field on InAs∕GaAs quantum dot infrared photodetector activation energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2747199
Reference27 articles.
1. Demonstration of a 256×256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors
2. Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
3. Quantum dots-in-a-well infrared photodetectors
4. Optical properties of Si-doped InAs/InP quantum dots
5. A. D. Stiff-Roberts, Ph.D. thesis University of Michigan, 2004.
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