Optimization of stripe width for low‐threshold operation of quantum well laser diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102887
Reference13 articles.
1. Threshold currents for AlGaAs quantum well lasers
2. Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers
3. Design of quantum well AlGaAs-GaAs stripe lasers for minimization of threshold current-application to ridge structures
4. Effects of well number, cavity length, and facet reflectivity on the reduction of threshold current of GaAs/AlGaAs multiquantum well lasers
5. Gain‐ and threshold‐current dependence for multiple‐quantum‐well lasers
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1. The measured dependence of the lateral ambipolar diffusion length on carrier injection-level in Stranski-Krastanov quantum dot devices;Journal of Applied Physics;2010-08-15
2. Submilliampere threshold current InGaAs-GaAs-AlGaAs lasers and laser arrays grown on nonplanar substrates;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
3. High power, reliable 645 nm compressively strained GaInP/GaAlInP laser diodes;Electronics Letters;1994-08-04
4. High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition;IEEE Photonics Technology Letters;1994-04
5. The effect of lateral leakage current on the experimental gain/current-density curve in quantum-well ridge-waveguide lasers;IEEE Journal of Quantum Electronics;1994
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