Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers-Reference-Cited by-同舟云学术

Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers

Published:2020-12-01 Issue:12 Volume:10 Page:125204
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mehdi H.¹^ORCID,Martin M.¹,David S.¹,Hartmann J. M.²,Moeyaert J.¹,Touraton M. L.¹²³,Jany C.²,Virot L.²^ORCID,Da Fonseca J.²,Coignus J.²^ORCID,Blachier D.²,Baron T.¹^ORCID

Affiliation:

1. Univ. Grenoble Alpes, CNRS, CEA/LETI-Minatec, Grenoble INP, LTM, 38000 Grenoble, France

2. University Grenoble Alpes, CEA, LETI, Minatec Campus, F-38054 Grenoble Cedex, France

3. STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles Cedex, France

Funder

Agence Nationale de la Recherche

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0030677

Reference25 articles.

1. Ultrahigh-Speed 0.5 V Supply Voltage $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ Quantum-Well Transistors on Silicon Substrate

2. Recent advances of heterogeneously integrated III–V laser on Si

3. Monolithically grown 2.5 μm InGaAs photodetector structures on GaP and GaP/Si (001) substrates

4. High operating temperature LWIR and VLWIR InAs1−xSbx optically immersed photodetectors grown on GaAs substrates

5. Voltage-Tunable Mid- and Long-Wavelength Dual-Band Infrared Photodetector Based on Hybrid Self-Assembled and Sub-Monolayer Quantum Dots

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge Photodetectors;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Photovoltaic Effect-Based Multifunctional Photodetection and Position Sensing Using a 3C-SiC/Si Heterojunction;ACS Applied Electronic Materials;2023-11-17

3. Recent Progress in III–V Photodetectors Grown on Silicon;Photonics;2023-05-14

4. III-V Heterostructure Grown on 300mm Ge/Si Wafer for Large-Scale Fabrication of Red μ-LEDs;IEEE Photonics Technology Letters;2023-01-15

5. High‐Speed Photodetectors on Silicon Photonics Platform for Optical Interconnect;Laser & Photonics Reviews;2022-10-18