Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces-Reference-Cited by-同舟云学术

Interface properties and in-plane linear photoluminescence polarization in highly excited type-II ZnSe/BeTe heterostructures with equivalent and nonequivalent interfaces

Published:2002-01-15 Issue:2 Volume:91 Page:652-657
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Zaitsev S. V.,Maksimov A. A.,Kulakovskii V. D.,Tartakovskii I. I.,Yakovlev D. R.,Ossau W.,Hansen L.,Landwehr G.,Waag A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1421039

Reference22 articles.

1. Giant Electro-optical Anisotropy in Type-II Heterostructures

2. Interband optical transitions in GaAs-Ga1−xAlxAs and InAs-GaSb superlattices

3. Interband optical transitions in GaAs-Ga1−xAlxAs and InAs-GaSb superlattices

4. Interface optical anisotropy in a heterostructure with different cations and anions

5. Photoluminescence study of the interface in type II InAlAs–InP heterostructures

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