High contrast, submilliwatt power InGaAs/GaAs strained‐layer multiple‐quantum‐well asymmetric reflection modulator
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105736
Reference12 articles.
1. Electrodispersive multiple quantum well modulator
2. Low-voltage multiple quantum well reflection modulator with on:off ratio > 100:1
3. Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors
4. Optical investigation of a new type of valence-band configuration inInxGa1−xAs-GaAs strained superlattices
5. Photoluminescence and photoconductivity measurements on band-edge offsets in strained molecular-beam-epitaxy-grownInxGa1−xAs/GaAs quantum wells
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1. Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications;Journal of Applied Physics;1999-05
2. Strain effects on exciton saturation in quantum-well optical modulator devices;Journal of the Optical Society of America B;1996-12-01
3. All-optical switching and passive mode-locking based on non-linear polarization rotation in a semiconductor quantum well amplifier;Optical and Quantum Electronics;1996-10
4. Nonlinear polarization switching in a semiconductor single quantum well optical amplifier;Applied Physics Letters;1995-10-09
5. Design and Analysis of Surface-Normal Fabry-Perot Optical Modulators in the Near Infrared (InGaAs/GaAs) and Blue-Green (ZnCdSe/ZnMgSSe) Regions;Guided-Wave Optoelectronics;1995
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