Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Physical and electrical properties of lanthanide-incorporated tantalum nitride for n-channel metal-oxide-semiconductor field-effect transistors

Published:2005-08-15 Issue:7 Volume:87 Page:073506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ren C.,Chan D. S. H.,Wang X. P.,Faizhal B. B.,Li M.-F.,Yeo Y.-C.,Trigg A. D.,Agarwal A.,Balasubramanian N.,Pan J. S.,Lim P. C.,Huan A. C. H.,Kwong D.-L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1947901

Reference15 articles.

1. Impact of gate workfunction on device performance at the 50 nm technology node

2. Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

3. Wide range work function modulation of binary alloys for MOSFET application

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