Deep‐level electron traps in vapor phase epitaxial GaAs grown with oxygen injection
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.336151
Reference22 articles.
1. Energy-Level Model for High-Resistivity Gallium Arsenide
2. Role of Oxygen in Reducing Silicon Contamination of GaAs during Crystal Growth
3. A study of electron traps in vapour-phase epitaxial GaAs
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4. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995
5. Compensation of shallow donors in dimethylaluminum methoxide‐doped GaAs;Journal of Applied Physics;1994-11-15
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