Field effect white and tunable electroluminescence from ion beam synthesized Si- and C-rich SiO2 layers

Author:

Jambois O.,Carreras Josep,Pérez-Rodríguez A.,Garrido B.,Bonafos C.,Schamm S.,Assayag G. Ben

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Chapter 13 Nanostructured Silicon Light Emitters;Silicon Nanophotonics: Basic Principles, Present Status, and Perspectives, 2nd Ed;2016-08-08

2. Effects of thermal annealing on photoluminescence of Si + /C + implanted SiO 2 films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-04

3. Raman study of light-emitting SiNx films grown on Si by low-pressure chemical vapor deposition;Thin Solid Films;2015-03

4. A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays;The Scientific World Journal;2015

5. Synthesis and Optical Properties of Si-Rich Nitride Containing Silicon Quantum Dots;Journal of Electronic Materials;2013-10-12

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