Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures-Reference-Cited by-同舟云学术

Combining experiment and optical simulation in coherent X-ray nanobeam characterization of Si/SiGe semiconductor heterostructures

Published:2016-07-07 Issue:1 Volume:120 Page:015304
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tilka J. A.¹,Park J.¹,Ahn Y.¹,Pateras A.¹^ORCID,Sampson K. C.¹,Savage D. E.¹,Prance J. R.²^ORCID,Simmons C. B.²,Coppersmith S. N.²,Eriksson M. A.²,Lagally M. G.¹,Holt M. V.³,Evans P. G.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

2. Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA

3. Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA

Funder

Division of Materials Research (DMR)

Division of Graduate Education (DGE)

Army Research Office (ARO)

Basic Energy Sciences (BES)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4955043

Reference38 articles.

1. Influence of misfit dislocations on the surface morphology of Si1−xGex films

2. Microfabricated strained substrates for Ge epitaxial growth

3. Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons

4. SiGe Technology: Heteroepitaxy and High-Speed Microelectronics

5. The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs

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