Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell-Reference-Cited by-同舟云学术

Demonstration of electric double layer gating under high pressure by the development of field-effect diamond anvil cell

Published:2020-06-01 Issue:22 Volume:116 Page:223506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Adachi Shintaro¹^ORCID,Matsumoto Ryo¹²³^ORCID,Yamamoto Sayaka¹²,Yamamoto Takafumi D.¹^ORCID,Terashima Kensei¹^ORCID,Saito Yoshito¹²^ORCID,Esparza Echevarria Miren¹,Baptista de Castro Pedro¹²^ORCID,Song Peng¹²^ORCID,Iwasaki Suguru¹⁴^ORCID,Takeya Hiroyuki¹^ORCID,Takano Yoshihiko¹²^ORCID

Affiliation:

1. MANA, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577, Japan

3. ICYS, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

4. Research Institute for Electronic Science (RIES), Hokkaido University, N20 W10, Kita-ku, Sapporo, Hokkaido 001-0020, Japan

Funder

JST-Mirai program

JSPS KAKENHI

JST-CREST

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0004973

Reference44 articles.

1. Electrolyte-gated charge accumulation in organic single crystals

2. Electric Field-Induced Modification of Magnetism in Thin-Film Ferromagnets

3. Insulator-to-metal transition in ZnO by electric double layer gating

4. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids

5. Field-Induced Superconductivity in Electric Double Layer Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Setup for pressurizing thin films through the superconductor–insulator transition;Review of Scientific Instruments;2021-08-01

2. Experimental Observation of Pressure-Induced Superconductivity in Layered Transition-Metal Chalcogenides (Zr,Hf)GeTe4 Explored by a Data-Driven Approach;Chemistry of Materials;2021-05-05