Single-mode lasing of GaN nanowire-pairs-Reference-Cited by-同舟云学术

Single-mode lasing of GaN nanowire-pairs

Published:2012-09-10 Issue:11 Volume:101 Page:113106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Huiwen¹,Wright Jeremy B.²,Luk Ting-Shan²,Figiel Jeffery J.²,Cross Karen²,Lester Luke F.¹,Balakrishnan Ganesh¹,Wang George T.²,Brener Igal²,Li Qiming²

Affiliation:

1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87131, USA

2. Sandia National Laboratories, Albuquerque, New Mexico 87185, USA

Funder

National Nuclear Security Administration, U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference21 articles.

1. Room-Temperature Ultraviolet Nanowire Nanolasers

2. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

3. One-Dimensional Nanostructures: Synthesis, Characterization, and Applications

4. Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks

5. Growth of nanowire superlattice structures for nanoscale photonics and electronics

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