Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition-Reference-Cited by-同舟云学术

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Percolation and nanosecond fluctuators in V2O3 films within the metal–insulator transition

Published:2020-10-01 Issue:10 Volume:8 Page:101103
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Chen Liyang¹,Zhou Panpan²,Kalcheim Yoav³,Schuller Ivan K.³^ORCID,Natelson Douglas¹²⁴⁵^ORCID

Affiliation:

1. Applied Physics Graduate Program, Rice University, Houston, Texas 77005, USA

2. Department of Physics and Astronomy, Rice University, Houston, Texas 77005, USA

3. Faculty of Materials Science and Engineering Technion, Israel Institute of Technology, Haifa 32000, Israel

4. Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA

5. Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, USA

Funder

National Science Foundation

U.S. Department of Energy

Office of Naval Research

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0023475

Reference44 articles.

1. Nanotextured phase coexistence in the correlated insulator V2O3

2. Metal-Insulator Transition in(V1−xCrx)2O3

3. Dynamic conductivity scaling in photoexcitedV2O3thin films

4. Ultrafast evolution and transient phases of a prototype out-of-equilibrium Mott–Hubbard material

5. Metal-insulator transition in V2O3 thin film caused by tip-induced strain

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1. Selective modulation of electronic transport in VO2 induced by 10 keV helium ion irradiation;Journal of Applied Physics;2024-03-28

2. Delta-T Flicker Noise Demonstrated with Molecular Junctions;Nano Letters;2024-01-31

3. Generation of Tunable Stochastic Sequences Using the Insulator–Metal Transition;Nano Letters;2022-01-21

4. Uniform structural phase transition in V2O3 without short-range distortions of the local structure;Physical Review B;2021-11-23

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